1 µm process

The 1 μm process refers to the level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]

Products featuring 1.0 μm manufacturing process

NTT introduced the 1 μm process for its DRAM memory chips, including its 64 kbit chip in 1979 and 256 kbit chip in 1980.[4]
NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
Intel 80386 CPU launched in 1985 was manufactured using this process.[6]

References

Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.
Myslewski, R (2011-11-15). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 2015-04-27. Retrieved 2015-04-19.
Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. doi:10.1109/JSSC.1974.1050511.
Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). CORE. Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019.
"Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.

External links

Brief timeline of microprocessor development

Preceded by 1.5 μm process	MOSFET semiconductor device fabrication process	Succeeded by 800 nm process

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[1] Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.

[2] Myslewski, R (2011-11-15). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 2015-04-27. Retrieved 2015-04-19.

[3] Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. doi:10.1109/JSSC.1974.1050511.

[Gealow-4] Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). CORE. Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019.

[stol-5] "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.

[6] Mueller, S (2006-07-21). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 2015-04-27. Retrieved 2012-05-11.

Semiconductor device fabrication

MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm – ~2022 002 nm – >2023
Half-nodes Density CMOS Device (multi-gate) Moore's law Semiconductor Industry Nanoelectronics