Trimethylgallium

Trimethylgallium
Names
	IUPAC name trimethylgallane, trimethanidogallium
Identifiers
CAS Number	1445-79-0 ;
3D model (JSmol)	Interactive image;
ChemSpider	14323 ;
ECHA InfoCard	100.014.452
PubChem CID	15051;
CompTox Dashboard (EPA)	DTXSID2061696 ;
	InChI InChI=1S/3CH3.Ga/h31H3; Key: XCZXGTMEAKBVPV-UHFFFAOYSA-N ; InChI=1/3CH3.Ga/h31H3;/rC3H9Ga/c1-4(2)3/h1-3H3 Key: XCZXGTMEAKBVPV-YHXBHQJBAF;
	SMILES [Ga](C)(C)C;
Properties
Chemical formula	Ga(CH3)3
Molar mass	114.827 g/mol
Appearance	clear colourless liquid
Melting point	−15 °C (5 °F; 258 K)
Boiling point	55.7 °C (132.3 °F; 328.8 K)
Hazards
Main hazards	pyrophoric
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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	Infobox references

Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH₃)₃. It is a colorless, pyrophoric liquid.[1] Unlike trimethylaluminium, but akin to trimethylindium, TMG is monomeric.[2]

Preparation

TMG is prepared by the reaction of gallium trichloride with various methylating agents. These include methyl lithium,[1] dimethylzinc, and trimethylaluminium.[3] The less volatile diethyl ether adduct can be prepared by using methylmagnesium iodide in ether. The ether ligands may be displaced with liquid ammonia as well.[4]

Applications

TMG is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP.[5] These material are used in the production of LED lighting and semiconductors as a metalorganic chemical vapor deposition precursor.

References

Bradley, D. C.; Chudzynska, H. C.; Harding, I. S. (1997). "Trimethylindium and Trimethylgallium". Inorganic Syntheses. 31: 67–74. doi:10.1002/9780470132623.ch8.
Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.
Gaines, D. F.; Borlin, Jorjan; Fody, E. P. (1974). "Trimethylgallium". Inorganic Syntheses. 15: 203–207. doi:10.1002/9780470132463.ch45.
Kraus, C. A.; Toonder, F. E. (1933). "Trimethyl Gallium, Trimethyl Gallium Etherate and Trimethyl Gallium Ammine". PNAS. 19 (3): 292–8. Bibcode:1933PNAS...19..292K. doi:10.1073/pnas.19.3.292. PMC 1085965. PMID 16577510.
Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–21. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

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[IS-1] Bradley, D. C.; Chudzynska, H. C.; Harding, I. S. (1997). "Trimethylindium and Trimethylgallium". Inorganic Syntheses. 31: 67–74. doi:10.1002/9780470132623.ch8.

[2] Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.

[3] Gaines, D. F.; Borlin, Jorjan; Fody, E. P. (1974). "Trimethylgallium". Inorganic Syntheses. 15: 203–207. doi:10.1002/9780470132463.ch45.

[4] Kraus, C. A.; Toonder, F. E. (1933). "Trimethyl Gallium, Trimethyl Gallium Etherate and Trimethyl Gallium Ammine". PNAS. 19 (3): 292–8. Bibcode:1933PNAS...19..292K. doi:10.1073/pnas.19.3.292. PMC 1085965. PMID 16577510.

[5] Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–21. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.